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首页> 外文期刊>Journal of Applied Crystallography >Measurement of high-quality diffraction data with a Nonius KappaCCD diffractometer: finding the optimal experimental parameters
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Measurement of high-quality diffraction data with a Nonius KappaCCD diffractometer: finding the optimal experimental parameters

机译:使用Nonius KappaCCD衍射仪测量高质量衍射数据:找到最佳实验参数

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摘要

The influence of the different experimental parameters on the quality of the diffraction data collected on tetrafluoroterephthalonitrile (TFT) with a Nonius KappaCCD instrument has been examined. Data sets measured with different scan widths (0.25degrees, 0.50degrees, 1.0degrees) and scan times (70 s/degrees and 140 s/degrees) were compared with a highly redundant data set collected with an Enraf-Nonius CAD4 point detector diffractometer. As part of this analysis it was investigated how the parameters employed during the data reduction performed with the EvalCCD and SORTAV programs affect the quality of the data. The KappaCCD data sets did not show any significant contamination from lambda/2 radiation and possess good internal consistency with low R-int values. Decreasing the scan width seems to increase the standard uncertainties, which conversely are improved by an increase in the scan time. The suitability of the KappaCCD instrument to measure data to be used in charge density studies was also examined by performing a charge density data collection with the KappaCCD instrument. The same multipole model was used in the refinement of these data and of the CAD4 data. The two refinements gave almost identical parameters and residual electron densities. The topological analysis of the resulting static electron densities shows that the bond critical points have the same characteristics. [References: 41]
机译:检验了不同的实验参数对用Nonius KappaCCD仪器在四氟对苯二甲腈(TFT)上收集的衍射数据质量的影响。将使用不同扫描宽度(0.25度,0.50度,1.0度)和扫描时间(70 s /度和140 s /度)测量的数据集与使用Enraf-Nonius CAD4点检测器衍射仪收集的高度冗余的数据集进行比较。作为此分析的一部分,研究了使用EvalCCD和SORTAV程序进行数据缩减时所使用的参数如何影响数据质量。 KappaCCD数据集没有显示出任何来自λ/ 2辐射的明显污染,并且具有良好的内部一致性和低R-int值。减小扫描宽度似乎会增加标准不确定度,相反,可通过增加扫描时间来改善这些不确定度。通过使用KappaCCD仪器执行电荷密度数据收集,还检查了KappaCCD仪器对测量电荷密度研究中使用的数据的适用性。在对这些数据和CAD4数据进行优化时,使用了相同的多极模型。两种改进给出了几乎相同的参数和残余电子密度。所得静态电子密度的拓扑分析表明,键的临界点具有相同的特性。 [参考:41]

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