Determination of Trace Impurities of H_2, O_2, Ar, N_2, CO, CO_2, and Hydrocarbons in High-Purity Monosilane by Gas Chromatography

摘要

Procedures were proposed for the determination of impurities of permanent gases (H_2, O_2, Ar, N_2, and CO), carbon dioxide, and hydrocarbons in high-purity monosilane by gas chromatography with detection limits of 1-3 ppm, 2 ppm, and 0.02-0.04 ppm, respectively, which are lower by 1-2 orders of magnitude than toes published in the literature. The procedures make it possible to check the compliance of the purity of monosilane with present standards of microelectronics (TU 48-0513-057.0-91).