Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K

摘要

In this work i presented an analysis of the substrate influences on the effective channel length and series resistance extraction method in full depleted enhancement-mode Silicon-On-Insulator (SOI) nMOSFETs operating at nitrogen temperature. This analysis was supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations results and by analytical expressions solution. The effective channel length extraction method is significantly influenced by the substrate potential drop. However, the substrate influence on the series resistance extractions method can be considered negligible in all studied conditions.