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Nanotribological and nanomechanical properties of 5-80 nm tetrahedral amorphous carbon films on silicon

机译:硅上5-80 nm四面体非晶碳膜的纳米摩擦学和纳米力学性能

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摘要

Nanoscratch testing has been used to investigate the tribological behaviour of 5, 20, 60 and 80 nm tetrahedral amoiphous carbon (ta-C) thin films deposited on silicon by the filtered cathodic vacuum arc method. The nanoscratch behaviour of the films was found to depend on the film thickness, with 60 and 80 nm films undergoing border cracking and then at higher critical load a dramatic delamination event. 5 and 20 nm films have a lower critical load for onset of border cracks but do not undergo a clear dramatic failure, and instead are increasingly worn/ploughed through until film removal as confirmed by microscopic analysis. This is consistent with the thinner films having lower stress and reduced load-carrying ability. Nanoindentation confirms that the thicker films have enhanced load support and higher measured composite (film+substrate) hardness. The 80 nm film hi particular can retain appreciable load support whilst deformed during indentation, as shown by its ability to alter the critical loads for contact-induced phase transformations in the Silicon substrate during unloading.
机译:纳米划痕测试已用于通过过滤阴极真空电弧法研究沉积在硅上的5、20、60和80 nm四面体无碳碳(ta-C)薄膜的摩擦学行为。发现膜的纳米划痕行为取决于膜的厚度,其中60和80 nm的膜经历边界裂纹,然后在较高的临界载荷下发生剧烈的分层现象。 5和20 nm的薄膜具有较低的临界应力,可用于边界裂纹的发生,但不会遭受明显的剧烈破坏,而是逐渐磨损/翻耕,直到通过显微镜分析确认薄膜被清除为止。这与具有较低应力和降低的承载能力的较薄薄膜是一致的。纳米压痕证实,较厚的薄膜具有增强的负载支撑和更高的复合材料(薄膜+基材)硬度。 80 nm薄膜尤其可以在压痕变形时保留明显的负载支撑,如其在卸载过程中改变临界负载以实现硅衬底中接触诱导的相变的能力所表明的那样。

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