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Bonding defects and optical band gaps of DLC films deposited by microwave surface-wave plasma CVD

机译:微波表面波等离子体CVD沉积的DLC薄膜的键合缺陷和带隙

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摘要

The effects of CH_4/C_2H_4 flow ratio and annealing temperature on the defect states and optical properties of diamond-like carbon (DLC) films deposited by novel microwave surface-wave plasma chemical vapour deposition (MW SWP CVD) are studied through UV/ VIS/NIR measurements, atomic force microscopy, Raman spectroscopy and electron spin resonance analysis. The optical band gap of DLC has been tailored between a relatively narrow range, 2.65-2.5 eV by manipulating CH_4/C_2H_4 flow ratio and a wide range, 2.5-0.95 by thermal annealing. The ESR spin density varied between 10~(19) to 10~(17) spins/cm~3 depending on the CH_4/C_2H_4 flow ratio (1:3 to 3:1). The defect density increased with increasing annealing temperature. Also, there is a strong dependence of spin density on the optical band gap of the annealed-DLC films, and this dependency has been qualitatively understood from Raman spectra of the films as a result of structural changes due to sp~3/sp~2 carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness <0.5 nm).
机译:通过UV / VIS / VIS研究了CH_4 / C_2H_4的流量比和退火温度对新型微波表面波等离子体化学气相沉积(MW SWP CVD)沉积的类金刚石碳(DLC)薄膜的缺陷状态和光学性能的影响。近红外测量,原子力显微镜,拉曼光谱和电子自旋共振分析。通过控制CH_4 / C_2H_4的流量比,DLC的光学带隙已在2.65-2.5 eV的较窄范围内调整,而通过热退火则在2.5-0.95的宽范围内进行了调整。根据CH_4 / C_2H_4流量比(1:3至3:1),ESR自旋密度在10〜(19)至10〜(17)自旋/ cm〜3之间变化。缺陷密度随着退火温度的升高而增加。而且,自旋密度对退火的DLC薄膜的光学带隙有很强的依赖性,并且由于sp〜3 / sp〜2引起的结构变化,已经从薄膜的拉曼光谱定性地理解了这种依赖性。碳键网络。发现薄膜的表面非常光滑且均匀(RMS粗糙度<0.5 nm)。

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