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Optical Properties of Poly(3-hexylthiophene)/ZeS Nanocomposites

机译:聚(3-己基噻吩)/ ZeS纳米复合材料的光学性质

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Nanocomposites comprised of po1y(3-alkyl thiophenes)(P3ATs)/semiconductor nanoparticles exhibited excellent photoelectricity performance due to contributions from both the P3ATs and the semiconductor nanoparticles.In this study,poly(3-hexylthiophene)(P3HT)was synthesized and P3HT/ZnS nanocomposites were prepared using an in-situ method.The ZnS nanoparticles exhibited strong quantum effect on the photoluminescence(PL)properties of P3HT/ZnS and the nanocomposites exhibit an enhanced PL and red-shifted emission with increasing ZnS content.The PL quenched at ZnS-to-3HT ratio of 9.92 X 10~(-2)mol mol~(-1).The charge-transfer process between P3HT and ZnS particles is discussed.The P3HT/ZnS composites also exhibited excellent nonlinear optical(NLO)properties.The third-order NLO coefficient of P3HT/ZnS(chi~(3)=-6.76 X 10~(-12)esu)is higher than that of P3HT.The P3HT/ZnS nanocomposites have potential optical applications.
机译:由聚(3-烷基噻吩)(P3ATs)/半导体纳米颗粒组成的纳米复合材料由于P3ATs和半导体纳米颗粒的共同作用而表现出优异的光电性能。 ZnS纳米复合材料的原位制备方法是:ZnS纳米颗粒对P3HT / ZnS的光致发光(PL)性能表现出较强的量子效应,随着ZnS含量的增加,纳米复合材料的PL和红移发射增强。 ZnS与3HT的比率为9.92 X 10〜(-2)mol mol〜(-1),讨论了P3HT与ZnS颗粒之间的电荷转移过程,P3HT / ZnS复合材料还表现出优异的非线性光学(NLO)性能P3HT / ZnS的三阶NLO系数(chi〜(3)=-6.76 X 10〜(-12)esu)高于P3HT.P3HT / ZnS纳米复合材料具有潜在的光学应用前景。

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