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Effect of plasma cleanings on the characteristics of MgO layer for plasma display panel

机译:等离子清洗对等离子显示屏MgO层特性的影响

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In this study, the effects of plasma cleanings on the outgassing and surface characteristics of a MgO layer used for plasma display panel were investigated. As the plasma cleaning methods, an atmospheric pressure cleaning with He/O-2/Ar/N-2 and a low pressure inductively coupled plasma (ICP) cleaning with Ar/O-2 were used. When the outgassing characteristics of the MgO layer cleaned by the plasmas were measured in a vacuum from room temperature to 673 K by a quadrupole mass spectrometer, a decrease in vapor pressures from the outgassing species such as H2O, CO2, CO and H, could be observed due to the removal of the contamination such as H2O and organic materials from the MgO surface by the plasma cleanings. The MgO layer after the atmospheric pressure plasma cleaning showed lower outgassing compared to that after the low pressure ICP cleaning, however, the surface roughness of the MgO after the cleanings was lower for the low pressure ICP cleaning. Secondary electron emission coefficient (SEEC) of the MgO layers was increased approximately 1.5-2.5 times after the plasma cleanings for both the atmospheric pressure plasma cleaning with He/O-2/Ar/N-2 and the low pressure plasma cleaning with Ar/O-2. (C) 2003 Elsevier B.V. All rights reserved. [References: 14]
机译:在这项研究中,研究了等离子体清洁对用于等离子体显示面板的MgO层的除气和表面特性的影响。作为等离子体清洁方法,使用了用He / O-2 / Ar / N-2进行的大气压清洁和用Ar / O-2进行的低压感应耦合等离子体(ICP)清洁。用四极质谱仪在室温至673 K的真空条件下测量通过等离子体清洁的MgO层的脱气特性时,H2O,CO2,CO和H等脱气物质的蒸气压可能会降低。由于通过等离子体清洁从MgO表面去除了诸如H2O和有机物质之类的污染物,因此可以观察到。与低压ICP清洗后相比,大气压等离子体清洗后的MgO层显示出较低的脱气,但是,对于低压ICP清洗,清洗后的MgO的表面粗糙度较低。在用He / O-2 / Ar / N-2进行大气压等离子体清洁和使用Ar / N进行低压等离子体清洁的等离子体清洁之后,MgO层的二次电子发射系数(SEEC)增加了约1.5-2.5倍。 O-2。 (C)2003 Elsevier B.V.保留所有权利。 [参考:14]

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