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首页> 外文期刊>The Journal of Chemical Physics >TOWARD RESOLUTION OF THE SILICON DICARBIDE (SIC2) SAGA - AB INITIO EXCURSIONS IN THE WEB OF POLYTOPISM [Review]
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TOWARD RESOLUTION OF THE SILICON DICARBIDE (SIC2) SAGA - AB INITIO EXCURSIONS IN THE WEB OF POLYTOPISM [Review]

机译:朝着解决多角化网络中碳化硅(SIC2)SAGA-AB initios的方向发展[综述]

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The long-standing problem of the topography, energetics, and vibrational dynamics of the ground-state surface of SiC2 is systematically investigated by means of the gamut of state-of-the-art electronic structure methods, including single-reference correlation techniques as extensive as the coupled-cluster singles and doubles method augmented by a perturbative triples term [CCSD(T)], the Brueckner doubles method (ED) with analogous contributions from both triple and quadruple excitations [BD(TQ)], and second- through fifth-order Moller-Plesset perturbation theory (MP2-MP5), as well as the multiconfigurational complete-active-space self-consistent-field [CASSCF(12,12)] approach. The one-particle basis sets for these studies ranged from Si[6s4p1d], C[4s2y1d] to Si[7s6p4d3f2g1h], C[6s5p4d3f2g1h]. The methodological analysis resolves the polytopism problem regarding the mercurial potential energy surface for the circumnavigation of Si+ about C-2(-) in silicon dicarbide, whose topography is shown to exhibit almost all conceivable variations with level of theory. It is concluded that the (X) over tilde (1)A(1), global minimum of SiC2 is a T-shaped (C-2 upsilon) structure connected monotonically to a linear transition state 5.8 kcal mol(-1) higher in energy, thus ruling out any metastable linear isomer. Previously undocumented bent transition states and L-shaped minima are encountered at relatively high levels of theory, but ultimately these stationary points are shown to be spurious. High-level focal-point thermochemical analyses yield D-0(Si-C-2)=151 kcal mol(-1), and hence a substantial revision is made in the heat of formation, viz., Delta H(f,0)degrees(SiC2)=+155 kcal mol(-1). A complete quartic force field about the T-shaped minimum is determined at the CCSD(T) level with the aug-cc-pVTZ (Si[6s5p3d2f], C[5s4p3d2f]) basis set and then employed in a preliminary probe of contours for large-amplitude motion, anharmonicity of the vibrations, and zero-point effects on the molecular structure. (C) 1997 American Institute of Physics. [References: 108]
机译:利用最先进的电子结构方法,包括广泛使用的单参考相关技术,系统地研究了SiC2基态表面的长期存在的形貌,能量学和振动动力学问题。作为由扰动三项项[CCSD(T)]增强的耦合集群单打和双打方法,具有三重和四重激励[BD(TQ)]以及从第二到第五的相似贡献的Brueckner双打方法(ED)阶Moller-Plesset微扰理论(MP2-MP5),以及多配置完全活动空间自洽场[CASSCF(12,12)]方法。这些研究的单粒子基础范围从Si [6s4p1d],C [4s2y1d]到Si [7s6p4d3f2g1h],C [6s5p4d3f2g1h]。该方法学分析解决了关于在二碳化硅中围绕C-2(-)的Si +绕行的汞势能面的多面性问题,其拓扑结构显示出理论上几乎可以想到的所有变化。结论是,在波浪线(1)A(1)上的SiC2的全局最小值(X)是T型(C-2 upsilon)结构,该结构单调连接到线性过渡态,该线性过渡态的5.8 kcal mol(-1)高。能量,因此排除了任何亚稳的线性异构体。在较高的理论水平上会遇到以前未记录的弯曲过渡状态和L形最小值,但最终这些固定点显示为虚假的。高阶焦点热化学分析得出D-0(Si-C-2)= 151 kcal mol(-1),因此对地层热进行了实质性修正,即Delta H(f,0 )度(SiC2)= + 155 kcal mol(-1)。使用aug-cc-pVTZ(Si [6s5p3d2f],C [5s4p3d2f])基集在CCSD(T)级别确定大约T形最小值的完整四次力场,然后将其用于轮廓的初步探测大振幅运动,振动的非谐性以及对分子结构的零点影响。 (C)1997美国物理研究所。 [参考:108]

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