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首页> 外文期刊>The Journal of Chemical Physics >LASER PHOTOFRAGMENTATION AND COLLISION-INDUCED REACTIONS OF SIF22+ AND SIF32+
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LASER PHOTOFRAGMENTATION AND COLLISION-INDUCED REACTIONS OF SIF22+ AND SIF32+

机译:激光碎裂和碰撞诱导的SIF22 +和SIF32 +反应

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Laser photofragmentation processes of the doubly charged ions SiF22+ and SiF32+ are studied at 1064, 532, and 355 nm. The observed photoproducts are compared with those of the reaction pathways induced by the collisions of these dications with the rare gases. Photodissociation, via absorption of a single photon occurs readily for both dications, and the photoion yields are dominated by the products of neutral-loss pathways: SiF2+ from SiF22+ and SiF22+ from SiF32+. A minor contribution from photoinduced charge separation is also observed. For SiF22+, a neutral-loss pathway forming the atomic dication Si2+ is also detected at higher photon energies. The excitation energy required for this fragmentation process is determined to be 2.2 +/- 0.2 eV. Collisions of SiF22+ and SiF32+ with He and Ne are also dominated by neutral-loss reactions, With the heavier rare gases, charge transfer is exothermic and dominates the product ion yield, although neutral-loss reactions still occur. Interpretation of the charge transfer results using Landau-Zener theory suggests that two electronic states of SiF22+, lying at 31.0 +/- 0.5 eV and 35.5 +/- 0.5 eV above the ground state of the neutral molecule, are present in the dication beam. Ab initio calculations reveal SiF32+ adopts an equilibrium geometry of C-2v symmetry with one elongated bond. Hence, electron capture by SiF32+ results in the formation of SiF3+ in an energetically unfavorable conformation. By taking account of these geometry differences in the Landau-Zener algorithm, a satisfactory rationalization of the ion yields from the charge transfer reactions of SiF32+ is achieved. (C) 1997 American Institute of Physics. [References: 58]
机译:研究了双电荷离子SiF22 +和SiF32 +在1064、532和355 nm处的激光碎裂过程。将观察到的光产物与由这些指示剂与稀有气体的碰撞引起的反应路径的光产物进行比较。两种指示剂都容易通过吸收单个光子而发生光解离,并且光离子产率受中性损耗途径的产物支配:SiF22 +的SiF2 +和SiF32 +的SiF22 +。还观察到了光诱导电荷分离的微小贡献。对于SiF22 +,在更高的光子能量下也可以检测到形成原子指示Si2 +的中性损耗路径。该碎裂过程所需的激发能被确定为2.2 +/- 0.2 eV。 SiF22 +和SiF32 +与He和Ne的碰撞也受中性损失反应的支配。尽管中性损失反应仍会发生,但使用较重的稀有气体,电荷转移会放热并控制产物离子的收率。使用Landau-Zener理论解释电荷转移的结果表明,在指示束中存在SiF22 +的两个电子态,分别位于中性分子的基态上方31.0 +/- 0.5 eV和35.5 +/- 0.5 eV。从头算计算表明SiF32 +采用C-2v对称的对称几何结构,带有一个细长键。因此,SiF32 +捕获电子会导致形成在能量上不利的构象的SiF3 +。通过在Landau-Zener算法中考虑这些几何差异,可以实现SiF32 +的电荷转移反应对离子产率的令人满意的合理化。 (C)1997美国物理研究所。 [参考:58]

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