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Electronic friction in proton tunneling at the electrochemical interface

机译:质子隧穿在电化学界面的电子摩擦

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We consider the effects of electronic friction (nonadiabaticity) on the tunneling of a proton from an H3O+ in water to the surface of a metal electrode. The final state is a hydrogen atom adsorbed on the surface of the metal. We use a simple model Hamiltonian for the description of the process and calculate the tunneling probability using the semiclassical approaches of Miller [J. Chem. Phys. 62, 1899 (1975)]. The continuum of electron-hole excitations is accounted for by treating them as bosons. We show that typically, tunneling probability can be decreased by one to two orders of magnitude by coupling to electron-hole excitations. We also report on the effect of isotopic substitution on this rate. While our analysis is specifically for an electrochemical situation, the results are of general validity and imply a decrease in tunneling probability, due to electronic friction for the proton in cases where tunneling occurs in the presence of a metal surface for example, atom transfer in STM experiments. (C) 1998 American Institute of Physics. [References: 20]
机译:我们考虑了电子摩擦(非绝热性)对质子从水中H3O +到金属电极表面的隧穿的影响。最终状态是吸附在金属表面的氢原子。我们使用简单的模型哈密顿量来描述过程,并使用米勒的半经典方法来计算隧穿概率。化学物理62,1899(1975)]。通过将电子空穴激发视为玻色子来解释其连续性。我们表明,通常,通过耦合到电子空穴激发,隧穿概率可以降低一到两个数量级。我们还报告了同位素取代对该速率的影响。尽管我们的分析专门针对电化学情况,但该结果具有一般有效性,并且暗示了隧穿可能性的降低,这是由于在存在金属表面的情况下发生隧穿的情况下质子的电子摩擦,例如STM中的原子转移实验。 (C)1998美国物理研究所。 [参考:20]

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