The 2007 F. M. Becket Summer Research Fellowship - Summary Report: Development of a 3C-SiC Deposition System

摘要

Several material properties make using SiC advantageous over Si for use in micro-pressure sensors and in high power switches. Specifically 3C-SiC is a wide bandgap material that can operate at elevated temperatures, higher power densities, and/or in harsher environments than conventional Si-based devices.1 Mechanically 3C-SiC is a very hard material with elastic moduli that are roughly twice that of silicon. Plastic deformation onset and the increase of the intrinsic carrier concentration to significant values are also shifted to higher temperatureswhenusingSiC.