Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides

摘要

High-power semiconductor lasers based on asymmetric quantum-dimensional separate confinement InGaAs/GaAs heterostructures with ultrathick waveguides were fabricated by means of metalorganic hydride vapor phase epitaxy technology. The laser characteristics were studied in a pulsed pumping regime, in which the emission was excited by current pulses of 100 ns duration at a repetition frequency of 10 kHz and an amplitude of up to 200 A. The passage to a pulsed lasing regime allowed the active region heating to be reduced and the output power to be increased to 145 W for a laser diode with a 100-mu m exit aperture. The results obtained for the pulsed lasing regime show that saturation of the output power-current characteristic observed in the continuous-wave regime is fully determined by overheating of the active region of a semiconductor laser.