The influence of a photoinduced volume charge on the weak-radiation-induced interband photoproduction of carriers in semiconductors with impurity recombination centers

摘要

Analytical expressions for the average concentrations of photogenerated electrons and holes are obtained outside the framework of the quasineutrality approximation in the case of a strong surface recombination in the presence of a single-level impurity recombination centers. It is shown that the quasineutrality approximation becomes incorrect with decreasing sample size in the direction of irradiation.