COMPARISON OF YOUNG'S MODULUS OF Si_3N_4 DETERMINED BY DIFFERENT METHODS AND DEPENDENCE OF YOUNG'S MODULUS ON TEMPERATURE

摘要

In this contribution different methods have been used for the measurement of Young's modulus of a monolithic Si_3N_4, and for comparison of the obtained experimental values. Indentation tests have been applied using a Knoop indenter at the loads from 50N to 200N and using a depth sensing method for Vickers indentation loads from 50mN to 2000mN. An impulse excitation technique as a non-indentation method has been used at room and high temperatures up to 1000 deg C. The values of Young's modulus obtained from the indentation tests are load dependent and increasing with a decreasing of the indentation load.