Researchers at the Georgia Institute of Technology have devised a new method for fabricating nanometer-scale graphene that may become the basis for a new type of high-performance electronic devices. Graphene, a honeycomb lattice made of a single layer of carbon atoms, has excellent electronic properties. However, its use in electronic devices such as field-effect transistors is impractical at room temperature without the introduction of a bandgap (i.e., an energy range in a solid from which electrons are excluded).
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