DUAL ORDINARY, INTEGRAL QUANTUM, AND FRACTIONAL QUANTUM HALL EFFECTS IN PARTIALLY GATED DOUBLY CONNECTED GAAS/ALXGA1-XAS HETEROSTRUCTURE DEVICES

摘要

Partially gated doubly connected quasi-two-dimensional GaAs/AlxGa1-xAs heterostructure devices, which include striplike, bimodal electron density, n, distributions are used to demonstrate that the Hall resistance determined from a fixed set of voltage contacts can vary strongly with the off-diagonal resistivity rho(xy) of the material connecting the source and the drain. The results are also used to deduce the response of homogeneous carrier density Hall configurations subject to similarly patterned inhomogeneous magnetic fields. [References: 20]