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首页> 外文期刊>Physical Review, A. Atomic, molecular, and optical physics >Measurements of the electron-impact differential cross sections and generalized oscillator strengths for excitation of the 2 S-1 and 3 S-1 states in helium at small scattering angles
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Measurements of the electron-impact differential cross sections and generalized oscillator strengths for excitation of the 2 S-1 and 3 S-1 states in helium at small scattering angles

机译:在小散射角下激发氦气中2 S-1和3 S-1态的电子碰撞微分截面和广义振荡器强度的测量

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Differential cross sections (DCS's) for excitation of the 2 S-1 and 3 S-1 states in helium have been measured at small scattering angles from O degrees to 15 degrees for the electron-impact energies from 100 to 500 eV. Measurements were performed with a high angular resolution, better than 1 degrees, and with an accuracy of the angle position of 0.2 degrees. Distinct forward peaking features have been observed at minute scattering angles lower than about 3 degrees for impact energies higher than 200 eV. Experimental DCS's as functions of the scattering angle are compared with theoretical calculations based on various kinds of approximation method. Effective generalized oscillator strengths (GOS's) for the 2 S-1 and 3 S-1 excitations were deduced from the DCS's for impact energies 100-500 eV as a function of the squared momentum transfer K-2. A systematic discrepancy between the measured effective GOS's and the theoretical GOS calculated by the first Born approximation has been displayed at the low limit of K-2. The effective GOS's appear to approach the theoretical GOS very slowly as the impact energy increases, however, the GOS for low values of K-2 Still does not agree with the theoretical GOS up to the impact energy 800 eV for the 2 S-1 excitation. [References: 36]
机译:对于100到500 eV的电子碰撞能量,已经在O到15度的小散射角下测量了氦中2 S-1和3 S-1态激发的微分截面(DCS)。以高于1度的高角度分辨率和0.2度的角度位置精度进行测量。对于高于200 eV的冲击能,在小于约3度的微小散射角处观察到了明显的前向峰值特征。将实验DCS作为散射角的函数与基于各种近似方法的理论计算进行比较。对于冲击能量100-500 eV,根据平方动量传递K-2的函数,从DCS得出2 S-1和3 S-1激发的有效广义振荡器强度(GOS)。在K-2的下限显示了测得的有效GOS与通过第一次Born近似计算的理论GOS之间的系统差异。当冲击能量增加时,有效GOS接近理论GOS的速度很慢,但是,对于低K-2值的GOS仍然与理论GOS不一致,直到2 S-1激发的冲击能量为800 eV 。 [参考:36]

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