New electronic surface states on In-terminated InAs(001)4 x 2-c(8x2) clean surface

摘要

We report the studies of electronic structure of the InAs(00 1)4 x 2-c(8 x 2) surface by performing angle-resolved photoemission spectroscopy, LEED and STM measurements. The reconstruction of the clean surface was obtained by ion bombardment and annealing procedure. STM pictures show an ordered array of In-chains, and the photoemission experiments reveal new electronic surface structures. The intensity of these structures, which are located at binding energy of ―2.94 and ―1.05 eV, strongly depend on the surface preparation, and on the light polarization. They are non-dispersive with the photon energy.