Growth of In nanocrystallite arrays on the Si(100)-c(4 x 12)-Al surface

摘要

Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(100)-c(4x12)-Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 degrees C. In comparison to the case of In deposition onto the clean Si(100) surface or Si(100)4 x 3-In reconstruction, the In growth mode is changed by the c(4 x 12)-Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer-Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed. (c) 2006 Elsevier B.V. All rights reserved.