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Effect of configuration and biaxial strain to electronic structure of half-fluorinated graphene

机译:构型和双轴应变对半氟化石墨烯电子结构的影响

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Mechanical stability and equilibrium structure of half-fluorinated graphene with different configurations of fluorine atoms on the surface of graphene are investigated by density functional theory (OFT). Phonon density of states reveals that the half-fluorinated graphene with chair, boat, zigzag, chair*, and boat* structures are stable. Band structures of the half-fluorinated graphene are calculated by DFT with generalized gradient approximation. Band gaps are corrected by the GW method. Half-fluorinated graphene with chair, zigzag, and chair* structures are metallic. Half-fluorinated graphene with chair structure is spin-polarized. Half-fluorinated graphene with boat and boat* structures are indirect band gap semiconductors and the GW band gaps of them are 5.147 eV and 5.648 eV respectively. Structural and electronic properties of half-fluorinated graphene under a series of biaxial strain are studied. A tensile strain larger than 6% can open an indirect band gap for half-fluorinated graphene with chair structure. Band gap type of half-fluorinated graphene with boat* structure undergoes an indirect-to-direct transition under compressive strain. (C) 2014 Elsevier B.V. All rights reserved.
机译:利用密度泛函理论(OFT)研究了石墨烯表面上不同氟原子结构的半氟化石墨烯的机械稳定性和平衡结构。声子的密度表明,具有椅子,船形,锯齿形,椅子*和船形*结构的半氟化石墨烯是稳定的。半氟化石墨烯的能带结构通过DFT和广义梯度近似计算得出。带隙通过GW方法校正。具有椅子,之字形和椅子*结构的半氟化石墨烯是金属的。具有椅子结构的半氟化石墨烯是自旋极化的。具有船形和船形结构的半氟化石墨烯是间接带隙半导体,其GW带隙分别为5.147 eV和5.648 eV。研究了一系列双轴应变作用下半氟化石墨烯的结构和电子性质。大于6%的拉伸应变会为椅子结构的半氟化石墨烯打开间接带隙。具有船形结构的半氟化石墨烯的带隙类型在压缩应变下经历了间接到直接的转变。 (C)2014 Elsevier B.V.保留所有权利。

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