机译:CoPc / Bi(111)界面电子结构的光电子能谱研究
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China|Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Aarhus Univ, Ctr Storage Ring Facil ISA, Dept Phys & Astron, DK-8000 Aarhus C, Denmark;
Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;
Photoemission spectroscopy; Electronic structure; CoPc; Bi(111); Interface;
机译:用俄歇光电子重合谱研究在Si(111)上生长的SiO _2超薄膜的局部价电子态:价带最大值随界面结构的上移
机译:俄歇光电子重合谱研究Si(111)上的局部价电子态和超薄氮化硅膜的价带最大值:厚度和界面结构依赖性
机译:二光子光电子能谱研究per-四羧酸二酐/ Ag(111)界面的电子结构
机译:X射线光电子谱氮化隙/间隙(111)界面之间的价带对准的研究
机译:具有离域电子结构和扩展电子结构相互作用的分子的光电子能谱和计算研究
机译:P2N3–的负离子光电子能谱:P2N3˙的电子亲和力和电子结构
机译:由角度分辨光电子谱研究的Si(111)2×1和Si(111)7×7的体积和表面电子结构