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Photoelectron spectroscopy study of the electronic structures at CoPc/Bi(111) interface

机译:CoPc / Bi(111)界面电子结构的光电子能谱研究

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摘要

Self-assembly of functional molecules on solid substrate has been recognized as an appealing approach for the fabrication of diverse nanostructures for nanoelectronics. Herein, we investigate the growth of cobalt phthalocyanine (CoPc) on a Bi(111) surface with focus on the interface electronic structures utilizing photoelectron spectroscopy. While charge transfer from bismuth substrate to the molecule results in the emergence of an interface component in the Co 3p core level at lower binding energy, core-levels associated to the molecular ligand (C 1s and N 1s) are less influenced by the adsorption. In addition, density functional theory (DFT) calculations also support the empirical inference that the molecule-substrate interaction mainly involves the out-of-plane empty Co 3d orbital and bismuth states. Finally, valence band spectra demonstrate the molecule-substrate interaction is induced by interface charge transfer, agreeing well with core level measurements. Charge transfer is shown to be mainly from the underlying bismuth substrate to the empty states located at the central Co atom in the CoPc molecules. This report may provide a fundamental basis,to the on-surface engineering of interfaces for molecular devices and spintronics.
机译:功能分子在固体基质上的自组装已被认为是用于制造纳米电子学的各种纳米结构的一种有吸引力的方法。在这里,我们调查Bi(111)表面上钴酞菁(CoPc)的生长,重点是利用光电子能谱研究界面电子结构。虽然电荷从铋底物转移到分子导致在较低的结合能下Co 3p核心能级中出现界面组分,但与分子配体相关的核心能级(C 1s和N 1s)受吸附的影响较小。此外,密度泛函理论(DFT)的计算也支持经验推断,即分子与底物的相互作用主要涉及平面外空Co 3d轨道和铋态。最后,价带谱表明分子与底物的相互作用是由界面电荷转移引起的,与核能级测量结果非常吻合。已显示电荷转移主要是从下面的铋底物到位于CoPc分子中心Co原子的空态。该报告可能为分子器件和自旋电子学接口的表面工程提供基础。

著录项

  • 来源
    《Surface Science》 |2017年第7期|34-41|共8页
  • 作者单位

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China|Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Aarhus Univ, Ctr Storage Ring Facil ISA, Dept Phys & Astron, DK-8000 Aarhus C, Denmark;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China|Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photoemission spectroscopy; Electronic structure; CoPc; Bi(111); Interface;

    机译:光电子能谱;电子结构;CoPc;Bi(111);界面;

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