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机译:扩散欧姆接触金属原子对AlGaN / GaN异质结构场效应晶体管中器件缩放的增强作用
School of Mathematics, Shandong University, Jinan, 250100, China;
School of Mathematics, Shandong University, Jinan, 250100, China;
School of Microelectronics, Shandong University, Jinan, 250100, China;
School of Microelectronics, Shandong University, Jinan, 250100, China;
School of Microelectronics, Shandong University, Jinan, 250100, China;
School of Microelectronics, Shandong University, Jinan, 250100, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China;
Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, Mianyang, 621999, China;
AlGaN/GaN HFETs; Diffused Ohmic contact metal atoms; Polarization Coulomb field scattering;
机译:欧姆接触GaN / AlGaN / GaN异质结构场效应晶体管的电子传输机理
机译:使用Ti / Al双层具有凹入悬垂欧姆接触的无金AlGaN / GaN异质结构场效应晶体管
机译:等离子辅助表面处理,用于AlGaN / GaN异质结构场效应晶体管上的低温退火欧姆接触
机译:具有改善的欧姆接触的高速大功率AlGaN / GaN异质结构场效应晶体管
机译:AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
机译:具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
机译:TA / Ti / Al / Ni / Au欧姆接触到AlGaN / GaN异质结构场效应晶体管的研究
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管