...
首页> 外文期刊>Solid-State Circuits Newsletter, IEEE >A JSSC classic paper: The simple model of CMOS drain current
【24h】

A JSSC classic paper: The simple model of CMOS drain current

机译:JSSC经典论文:CMOS漏极电流的简单模型

获取原文
获取原文并翻译 | 示例
           

摘要

In a recent update of the Web list of frequently cited JSSC articles, an April 1990 paper by Takayasu Sakurai and A. Richard Newton on “Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas” joined the list of articles cited more than 100 times according to the annual Journal Citation Reports published by Thomson ISI. At the time the paper was written, Sakurai had just taken a break from a seven-year career working on memories at Toshiba to come to the University of California, Berkeley, as a visiting scholar and worked with Richard Newton, the dean of Berkeley's Electrical Engineering Department. Writing now from the Center for Collaborative Research and the Institute of Industrial Science at the University of Tokyo, Sakurai summarizes the inspiration and impact of this paper.
机译:在最近被频繁引用的JSSC文章的Web列表的最新更新中,Takayasu Sakurai和A. Richard Newton在1990年4月发表的文章“ Alpha-power law MOSFET模型及其在CMOS逆变器延迟和其他公式中的应用”加入了文章列表根据汤姆森ISI出版的年度期刊引文报告,被引用次数超过100次。在撰写本文时,樱井刚从东芝从事记忆工作的七年职业生涯中休了一段时间,以访问学者的身份来到加州大学伯克利分校,并与伯克利电气学院院长理查德·牛顿一起工作工程部。樱井由东京大学合作研究中心和工业科学研究所撰写,总结了本文的启示和影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号