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Scaling the Next-Generation Architecture: The Integration of 2.5D and 3D Integrated Circuits

机译:扩展下一代体系结构:2.5D和3D集成电路的集成

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摘要

On recent years, advancements in integrated circuit (IC) interconnection, packaging, and integration technologies have demonstrated the comprehensive solution benefits derived from three-dimensional (3D) IC and the 2.5-dimensional (2.5D) integration of heterogeneous dice. The current mass production of 3D IC devices utilizing silicon via technology, specifically within the memory IC industry, has enabled system designers to extract the maximum effective performance from the memory subsystem. An example of 3D ICs in mass production is high-bandwidth memory (HBM), a JEDEC standard memory solution, that is designed to scale next-generation memory subsystem requirements. This article will discuss the advanced packaging technology implemented on the HBM device, the resulting architecture, and the benefits when compared to existing external memory solutions. Examples of 2.5D heterogeneous system integration with the HBM device will also be highlighted.
机译:近年来,集成电路(IC)互连,封装和集成技术的进步证明了三维(3D)IC和异构芯片的2.5维(2.5D)集成所带来的全面解决方案优势。当前利用硅过孔技术的3D IC器件的大规模生产,特别是在存储器IC行业中,使系统设计人员能够从存储器子系统中获得最大的有效性能。大规模生产的3D IC的一个示例是JEDEC标准存储器解决方案高带宽存储器(HBM),旨在满足下一代存储器子系统的需求。本文将讨论在HBM设备上实现的高级封装技术,最终的体系结构以及与现有外部存储器解决方案相比的优势。 2.5D异构系统与HBM设备集成的示例也将突出显示。

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  • 来源
    《Solid-State Circuits Magazine, IEEE》 |2016年第2期|35-42|共8页
  • 作者

    Kevin Tran;

  • 作者单位

    Technical Marketing, SK Hynix, San Jose, California 95134 USA;

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  • 正文语种 eng
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