LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix B. Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits

摘要

This report summarizes the research carried out at North Carolina State University in support of the Rockwell International Program on 'LSI-VLSI Ion Implanted Planar GaAs IC Processing. The major thrust of the program at NCSU was to develop accurate computer models for analyzing the performance of short-channel GaAs MESFET devices as used in the Rockwell VLSI circuits. The modeling research is divided into three parts: (1) Two-dimensional finite difference simulation, (2) Two-dimensional Monte Carlo analysis, and (3) Analytical modeling. The intent was to use the two-dimensional analyses to give exact solutions to the device operation and to serve as a guide for developing a simpler, and less expensive, analytical model of sufficient accuracy to be valuable as a design aid and to study effects of parameter changes.