Electrical measurements of structural defects in Cd_(0.9)Zn_(0.1)Te by atomic force microscopy based methods

摘要

Bridgman grown, single crystal Cd_(0.9)Zn_(0.1)Te samples of non-spectroscopy grade material were investigated with nano-scale resolution by AFM based surface potential difference, electric force microscopy and tunnelling current methods. The results, confirmed by SEM characterization, indicate the presence of large, electrically charged structural defects. The defects are thought to be extended faults, creating significant variations in the surface band bending on the polished and etched crystal surface, and conductive channels in the bulk.