机译:通过反射电流阻挡设计进一步提高基于Ingan的发光二极管的光输出功率
Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Nol University Road, Tainan 701, Taiwan, Republic of China;
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan, Republic of ChinaDepartment of Electrical Engineering, Kun-Shan University, Yung-Kang City, Tainan 710, Taiwan, Republic of China;
Department of Electro-Optical Engineering, Kun-Shan University, Yung-Kang City, Tainan 710, Taiwan, Republic of China;
机译:通过一步电流阻断设计提高GaN基发光二极管的光输出功率
机译:具有高反射电流阻挡层的InGaN / GaN发光二极管的增强的光输出功率
机译:反射电流阻挡层增强GaN基发光二极管的光输出功率
机译:通过一步电流阻挡设计提高GaN基发光二极管的光输出功率
机译:改进了III族氮化物可见光和紫外发光二极管的性能,包括提取效率,电效率,热管理和高电流密度下的效率维持。
机译:光学相干断层扫描法测定大功率InGaN基发光二极管的热膨胀系数
机译:使用图案电流阻塞层以增强基于IngaN的发光二极管的光输出功率
机译:太阳能发光二极管电力线避免标记设计