机译:AlGaN / GaN HEMT中的陷阱现象:基于脉冲和瞬态测量的研究
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy,Italian Universities Nano-Electronics Team (IUNET), 40125 Bologna, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
University of California at Santa Barbara, Electrical & Computer Engineering Department,Engineering and Sciences Building 2215, Santa Barbara, CA 93106, USA;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy,Italian Universities Nano-Electronics Team (IUNET), 40125 Bologna, Italy;
机译:掺铁的AlGaN / GaN HEMT中的缓冲陷阱:基于脉冲和瞬态测量的物理性质研究
机译:实时电致发光和$ I {-} V $脉冲测量评估AlGaN / GaN HEMT的电子俘获速度
机译:AlGaN / GaN HEMT的晶圆上单脉冲热负荷-捕获现象的射频特性
机译:基于输出导纳频率色散,脉冲和瞬态测量的AlGaN / GaN HEMT中AB类操作下的陷阱研究
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:用于脉冲操作的AlGaN / GaN HEMT热设计优化的瞬态仿真
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明