机译:O_2流量对背栅石墨烯晶体管HfO_2栅极电介质的影响
Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore-560012, India ,Centre for NanoScience and Engineering (CeNSE), Indian Institute of Science, Bangalore-560012, India;
Centre for NanoScience and Engineering (CeNSE), Indian Institute of Science, Bangalore-560012, India ,Department of Electronics and Communication Engineering, Indian Institute of Science, Bangalore-560012, India;
Centre for NanoScience and Engineering (CeNSE), Indian Institute of Science, Bangalore-560012, India;
graphene; HfO_2; electron beam evaporation; transistor; O_2 flow rate;
机译:低压背压大气压化学气相沉积石墨烯条纹沟道晶体管,具有高κ介电常数,室温迁移率> 11000 cm〜2 / V·s
机译:原子层沉积的HfO_2栅介电膜中的氧浓度对多晶Si栅晶体管的电子迁移率的影响
机译:石墨烯场效应晶体管的多层HfO_2 / TiO_2栅极介电工程
机译:柔性基板上的顶栅石墨烯场效应晶体管通过使用一个氟化石墨烯作为电介质
机译:低能电子束辐照对分离门测试结构上石墨烯和石墨烯场效应晶体管的影响以及石墨烯的拉曼计量。
机译:可扩展高灵敏度无标签生产基于背栅石墨烯场效应晶体管的DNA生物传感器
机译:热蒸发的siO用作石墨烯场效应晶体管中的栅极电介质