Performance analysis of an ultralow power circuit using single halo CNTFETs

摘要

This work presents a comprehensive study of the influence of channel engineering on the switching, high frequency characteristics, and circuit-level performance of carbon nanotube field-effect transistors (CNTFETs). At the device level, new CNTFETs with single halo doping (SH-CNTFETs) have been proposed. The impact of SH implantation on the cutoff frequency (f(T)), switching delay (tau), and on/off current ratio (Ion/Ioff) has been explored and it is revealed that SH-CNTFETs have improved radio frequency (RF) and switching characteristics. At the circuit level, using the Hailey Simulation Program with IC Emphasis (HSPICE) with lookup table (LUT)-based Verilog-A models, the performance parameters of the circuit have been calculated. Results show that compared to a conventional CNTFET (C-CNTFET)-based inverter, the SH-CNTFET-based inverter exhibits better performance. In addition, we evaluate the stability and performance of six-transistor (6T) CNTFET static random access memory (SRAM) cells with SH-CNTFETs. The performance parameters such as static noise margin (SNM) and write delay as well as power-delay product (PDP) and SNM/write delay (SWD) have been calculated and optimized. It is shown that SH-CNTFET SRAMs have an improved performance in SNM, PDP, and write power compared to C-CNTFET SRAMs and the optimum halo doping level has been concluded. Our results may be useful for designing and optimizing CNTFET devices and circuits.