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Design and Analysis of Low-Power Adiabatic Logic Circuits by Using CNTFET Technology

机译:利用CNTFET技术设计和分析低功率绝热逻辑电路

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摘要

Miniaturization of semiconductor industries paved the way for rapid development in the field of digital electronics. In DSM range, power dissipation has become a major concern due to leakage currents; hence, researchers are continuously trying to evolve ways to mitigate this. Out of many such ways the use of carbon nanotube technology is a promising way to design low-power circuits, as carbon has a property of providing variable threshold voltage (V-TH) in N-type transistors. Here simulation results confirm that CNTFET has better performance than MOS and FinFET technologies in low-power world. In this paper existing and proposed adiabatic logic is implemented by CNTFET technology at 32nm in HSPICE by using Predictive Technology Model (PTM). Comparison of simulation results shows that proposed CNTFET-based ON-OFF-DCDB-PFAL adiabatic logic saves average power 94.33% in Buffer/NOT, 93.13% in NAND/AND, 93.14% in NOR/OR, 91.76% in XOR/XNOR when compared with 2N2N2P circuit at 10MHz frequency.
机译:半导体产业的小型化为数字电子领域的快速发展铺平了道路。在DSM范围内,由于泄漏电流,功耗已成为主要问题。因此,研究人员正在不断尝试开发减轻这种情况的方法。在许多此类方法中,碳纳米管技术的使用是设计低功耗电路的一种有前途的方法,因为碳具有在N型晶体管中提供可变阈值电压(V-TH)的特性。在这里的仿真结果证实,在低功耗环境中,CNTFET的性能优于MOS和FinFET技术。在本文中,现有的和拟议的绝热逻辑是通过使用预测技术模型(PTM)在HSPICE中以32nm的CNTFET技术实现的。仿真结果比较表明,基于CNTFET的ON-OFF-DCDB-PFAL绝热逻辑可在Buffer / NOT上平均节省94.33%,在NAND / AND上节省93.13%,在NOR / OR上节省93.14%,在XOR / XNOR上节省91.76%与10MHz频率下的2N2N2P电路相比。

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