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New Single-Wafer Processes Offer Alternative Backside Cleans

机译:新的单晶圆工艺提供了背面清洁的替代选择

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According to the International Technology Roadmap for Semiconductors, the backside particle requirement for optical lithography is < 94 particles per 200 mm wafer for 0.18 μm technology, and < 63 particles for 0.13 μm geometry for particles > 0.2 μm. Single-wafer cleaning processes developed by Semitool Inc. (Kalispell, Mont.) have been shown to effectively remove backside particles for copper removal and pre-lithography cleans. Results from independent experiments performed at Semitool and IMEC (Heverlee, Belgium)rndemonstrated Cu removal to below detection limits ( < 1E11 atoms/cm~2 Cu) from the wafer backside, bevel and opposite side edge exclusion zone. In addition, an O_3/hydrofluoric mixture was developed for backside particle removal before photolithography.
机译:根据《国际半导体技术路线图》,对于光学平版印刷术,背面颗粒的要求是:对于0.18μm技术,每200 mm晶片<94个颗粒;对于几何尺寸> 0.2μm的0.13μm几何体,<63个颗粒。由Semitool Inc.(蒙大拿州Kalispell)开发的单晶片清洗工艺已被证明可以有效去除背面颗粒,从而去除铜和进行光刻前清洗。在Semitool和IMEC(比利时Heverlee,比利时)进行的独立实验结果表明,从晶片背面,斜角和相对的侧边缘排除区,铜的去除率均低于检测极限(<1E11原子/ cm〜2 Cu)。另外,开发了O 3 /氢氟酸混合物以在光刻之前去除背面的颗粒。

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