3-d Ics enter Commercialization

摘要

Part 1 of this article, "How Might 3-D ICs Come Together?", reviewed the various processing options for fabricating 3-D stacked devices. Part 2 examines the activities of companies commercializing 3-D through-silicon via (TSV) technology. Traditional device scaling will reach its physical limit within the next 10-15 years, leaving little time for the development of new device structures such as carbon nanotubes (CNTs), spintronics and molecular switches. Therefore, while the integration of copper and low-k dielectrics continues, mounting concerns on device and system levels have industry leaders looking for new assembly methods to fill a short-term need. At the forefront are 3-D ICs, which can shorten interconnect lengths and lead to improvements in latency, power consumption and memory bandwidth.