Sub-5μm thin film c-Si solar cell by diffuse reflective substrate

摘要

Thin film (4.2μm ) c-Si cell with the superior short-circuit current of 25.5mA/cm~2 which is comparable to that of cast Si solar cells was realized by the improvement of anti-reflection coating and diffuse reflective-substrate. It was confirmed that this superior short-circuit current characterisitcs was due to the optical confinement based on the internal randamization. Finally, we present scenarios for future technological realization of high absorption efficiency.