首页> 外文期刊>Pramana >Contribution of backscattered electrons to the total electron yield produced in collisions of 8—28 keV electrons with tungsten
【24h】

Contribution of backscattered electrons to the total electron yield produced in collisions of 8—28 keV electrons with tungsten

机译:背散射电子对8-28 keV电子与钨碰撞产生的总电子产率的贡献

获取原文
获取原文并翻译 | 示例
           

摘要

It is shown experimentally that under energetic electron bombardment the backscattered electrons from solid targets contribute significantly (~80%) to the observed total electron yield, even for targets of high backscattering coefficients. It is further found that for tungsten (Z = 74) with a backscattering coefficient of about 0.50, about 20% of the total electron yield is contributed by the total secondary electrons for impact energies in the range of 8-28 keV. The yield of true backscattered electrons at normal incidence (η_0), total secondary electrons (δ) and the total electron yield (δ_(tot)) produced in collisions of 8-28 keV electrons with W have been measured and compared with predictions of available theories. The present results indicate that the constant-loss of primary electrons in the target plays a significant role in producing the secondary electrons and that it yields a better fit to the experiment compared to the power-law.
机译:实验表明,在高能电子轰击下,即使对于高反向散射系数的目标,来自固体靶材的反向散射电子也对观测到的总电子产率有显着贡献(约80%)。进一步发现,对于后向散射系数约为0.50的钨(Z = 74),冲击能量在8-28 keV范围内的总二次电子贡献了总电子产率的约20%。测量了在8-28 keV电子与W碰撞时产生的正向散射电子的产量(η_0),总二次电子(δ)和总电子产量(δ_(tot)),并将其与可用的预测进行了比较理论。目前的结果表明,靶中一次电子的恒定损耗在产生二次电子中起着重要作用,并且与幂律法相比,它对实验的拟合更好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号