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Contribution of backscattered electrons to the total electron yield produced in collisions of 8a€“28 keV electrons with tungsten

机译:背向散射电子对8a?28 keV电子与钨碰撞产生的总电子产率的贡献

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It is shown experimentally that under energetic electron bombardment the backscattered electrons from solid targets contribute significantly (a?? 80%) to the observed total electron yield, even for targets of high backscattering coefficients. It is further found that for tungsten (e?‘? = 74) with a backscattering coefficient of about 0.50, about 20% of the total electron yield is contributed by the total secondary electrons for impact energies in the range of 8a€“28 keV. The yield of true backscattered electrons at normal incidence (e???0), total secondary electrons (e???) and the total electron yield (e???tot) produced in collisions of 8a€“28 keV electrons with W have been measured and compared with predictions of available theories. The present results indicate that the constant-loss of primary electrons in the target plays a significant role in producing the secondary electrons and that it yields a better fit to the experiment compared to the power-law.
机译:实验表明,在高能电子轰击下,即使对于高反向散射系数的靶,来自固体靶的反向散射电子也对观察到的总电子产率有显着贡献(约80%〜80%)。进一步发现,对于后向散射系数约为0.50的钨(e?'?= 74),冲击能量在8a?28 keV范围内的二次电子总量贡献了总电子产率的约20%。 。垂直入射时真实反向散射电子的产量(e ??? 0),总二次电子(e ???)和在8a?28 keV电子与W的碰撞中产生的总电子产量(e ??? tot)已测量并与可用理论的预测进行了比较。目前的结果表明,靶中一次电子的恒定损耗在产生二次电子中起着重要作用,并且与幂律法相比,它对实验的拟合更好。

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