Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

摘要

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.