...
首页> 外文期刊>Physical review >Multiscale modeling of crowdion and vacancy defects in body-centered-cubic transition metals
【24h】

Multiscale modeling of crowdion and vacancy defects in body-centered-cubic transition metals

机译:体心立方过渡金属中拥挤和空位缺陷的多尺度建模

获取原文
获取原文并翻译 | 示例
           

摘要

We investigate the structure and mobility of single self-interstitial atom and vacancy defects in body-centered-cubic transition metals forming groups 5B (vanadium, niobium, and tantalum) and 6B (chromium, molybdenum, and tungsten) of the Periodic Table. Density-functional calculations show that in all these metals the axially symmetric < 111 > self-interstitial atom configuration has the lowest formation energy. In chromium, the difference between the energies of the < 111 > and the < 110 > self-interstitial configurations is very small, making the two structures almost degenerate. Local densities of states for the atoms forming the core of crowdion configurations exhibit systematic widening of the "local" d band and an upward shift of the anti-bonding peak. Using the information provided by electronic structure calculations, we derive a family of Finnis-Sinclair-type interatomic potentials for vanadium, niobium, tantalum, molybdenum, and tungsten. Using these potentials, we investigate the thermally activated migration of self-interstitial atom defects in tungsten. We rationalize the results of simulations using analytical solutions of the multistring Frenkel-Kontorova model describing nonlinear elastic interactions between a defect and phonon excitations. We find that the discreteness of the crystal lattice plays a dominant part in the picture of mobility of defects. We are also able to explain the origin of the non-Arrhenius diffusion of crowdions and to show that at elevated temperatures the diffusion coefficient varies linearly as a function of absolute temperature.
机译:我们调查周期表中形成组5B(钒,铌和钽)和6B(铬,钼和钨)的体心立方过渡金属中单个自填隙原子的结构和迁移率以及空位缺陷。密度泛函计算表明,在所有这些金属中,轴向对称的<111>自填隙原子构型具有最低的形成能。在铬中,<111>和<110>自填隙构型的能量之差很小,从而使这两种结构几乎退化。形成拥挤构型核心的原子的局部态密度表现出“局部” d能带的系统性加宽和反键峰的向上移动。利用电子结构计算提供的信息,我们得出了钒,铌,钽,钼和钨的Finnis-Sinclair型原子间族势。利用这些电势,我们研究了钨中自填隙原子缺陷的热活化迁移。我们使用描述缺陷与声子激发之间的非线性弹性相互作用的多弦Frenkel-Kontorova模型的解析解合理化仿真结果。我们发现,晶格的离散性在缺陷迁移率的图像中起主要作用。我们还能够解释人群的非阿累尼乌斯扩散的起源,并表明在升高的温度下,扩散系数随绝对温度线性变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号