机译:n型4H-SiC(0001)上氢嵌入石墨烯界面结构的核能级光电子能谱研究
NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;
NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;
NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ,Department of Mechanical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 Japan;
NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;
surface states, band structure, electron density of states; photoemission and photoelectron spectra; electron spectroscopy (X-ray photoelectron (XPS), auger electron spectroscopy (AES), etc.);
机译:角度相关的X射线光电子能谱研究Sio_2 / 4H-Sic(0001)界面过渡区的化学结构
机译:氢插入石墨烯/ 4H-SiC(0001)界面处非常渐进和异常的氧化
机译:热生长SiO_2 / 4H-SiC(0001)界面的同步X射线光电子能谱研究及其与电性能的关系
机译:角度分辨光电子能谱对4H-SiC(0001)轴上的热氧化初期的初始阶段和4°轴外基板
机译:碳化硅(0001)及其界面上外延石墨烯的隧穿光谱研究。
机译:在离轴4H-SiC上生长的外延石墨烯的纳米级结构表征(0001)
机译:Ni2p电子结构的价与核心光电子能谱研究(0001)