Metalorganic Chemical Vapor Deposition Heteroepitaxial β-Ga_2O_3 and Black Phosphorus Pn Heterojunction for Solar-Blind Ultraviolet and Infrared Dual-Band Photodetector

摘要

Recently, β-Ga_2O_3 and black phosphorus (BP) have attracted enormous attentionas the solar-blind ultraviolet (UV) and infrared (IR) photosensitive materials fornext-generation optoelectronic devices, respectively, due to their special bandgapand electrical characteristics. Many β-Ga_2O_3-based UV photodetectors andBP-based IR photodetectors have been investigated separately, but there is noreport on the heterojunction and photoelectric devices formed by these twoexcellent materials. Herein, metalorganic chemical vapor deposition (MOCVD)heteroepitaxial β-Ga_2O_3 and BP pn heterojunction for solar-blind UV and IRdual-band photodetector is proposed and demonstrated for the first time.The device demonstrates a remarkable photoresponse under UV and IR irradiationswith a responsivity of 88.5 and 1.24mAW1, respectively, clear pnheterojunction characteristics, as well as an excellent photoswitch periodicity.Moreover, under different irradiation conditions, the photoelectric properties ofβ-Ga_2O_3/BP pn heterojunction, including their photogeneration and photoresponse,are investigated in detail. These results signify that β-Ga_2O_3/BP pnheterojunction may find potential applications in future UV/IR dual-banddetection systems.