Electron paramagnetic resonance study of phosphorus-doped n-type homoepitaxial diamond films grown by chemical vapor deposition

摘要

Electron paramagnetic resonance technique has been applied to identify the microscopic origin of the n-type conductivity in phosphorus-doped {111}-homoepitaxial diamond films grown by chemical vapor deposition. The NIMS-1 center having the D_(2d) symmetry with g_‖ = 1.9983, g_⊥ = 2.0072 and the ~(31)P hyper-fine interaction of A_‖ = 5.77 mT, A_⊥ = 1.21 mT at 30 K is identified to be arising from the phosphorus donors based on the number of spins which matches to the number of the electrically active phosphorus atoms in the films. The wave function of the unpaired electron is localized by 12% on the phosphorus atom with a predominant p-character.