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机译:基于M面GaN膜的窄带光电检测
Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Mumbai 400005, India;
ISOM and Departamento de Ingenieria Flectronica, ETSI Telecomunicacion, Univcrsidad Politecnica de Madrid, 28040 Madrid, Spain;
ISOM and Departamento de Ingenieria Flectronica, ETSI Telecomunicacion, Univcrsidad Politecnica de Madrid, 28040 Madrid, Spain;
ISOM and Departamento de Ingenieria Flectronica, ETSI Telecomunicacion, Univcrsidad Politecnica de Madrid, 28040 Madrid, Spain;
Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5 - 7, 10117 Berlin, Germany;
Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5 - 7, 10117 Berlin, Germany;
optical activity; semiconductors; Ⅱ-Ⅵ semiconductors; semiconductor-device characterization; design; and modeling; photodiodes; phototransistors; photoresistors;
机译:基于应变M面GaN膜的超窄带紫外光电检测
机译:Nh_3源分子束外延在M平面独立Gan衬底上生长的M平面Al_xga_(1-x)n薄膜的各向异性和晶格弛豫的影响
机译:金属有机气相外延法在低缺陷密度M平面独立Gan衬底上生长M平面Ingan薄膜的改进特性和问题
机译:基于M平面GaN薄膜的窄带光检测
机译:射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
机译:在γ-LiAlO2(100)衬底上生长的M平面GaN薄膜的生长和表征
机译:基于M面GaN膜的窄带光电检测