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首页> 外文期刊>Photovoltaics, IEEE Journal of >Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT e-ZnSe Solar Cells
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Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT e-ZnSe Solar Cells

机译: p -Z n T e / n -Z n S中的开路电压的异质结带偏移限制 e 太阳能电池

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摘要

Limitations on the open-circuit voltage of p-ZnTe-ZnSe heterojunction solar cells are studied via current–voltage (–) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.
机译:p-ZnTe / n-ZnSe异质结太阳能电池的开路电压限制是通过在太阳能集中和可变温度下通过电流-电压(-)测量来研究的。在77 K和199阳光下,开路电压达到1.95 V的最大值。开路电压与在77 K下计算出的2.00 V内置电势显示出良好的一致性。这些结果表明,开路电压受与II型异质结带阵容相关的异质结带偏移的限制,而不是与ZnTe吸收材料的带隙能。

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