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首页> 外文期刊>Organic Electronics >Work-function-controlled operation mode transition between photodiode and photoconductor modes in organic photodetectors
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Work-function-controlled operation mode transition between photodiode and photoconductor modes in organic photodetectors

机译:在有机光电探测器中,由工作函数控制的工作模式在光电二极管和光电导体模式之间转换

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The organic photodetectors (OPDs) can be proposed in two different ways: a photodiode system or a photoconductor type, where the external quantum efficiency (EQE) cannot exceed 100% in the former one but it can in the latter one. Whether the electrode-active layer contacts can inject at least one kind of carriers is the critical factor to determine the specific photodetector type. Therefore, the role of electrode/semiconductor contacts in the OPDs needs to be fully understood. In this work, we demonstrate the high performance OPDs based on PTB7:PC71 BM bulk heterojunction with the different top metal electrodes (Ag, Au, Al) by incorporating the PFN modified ITO electrode. Ultraviolet photoelectron spectroscopy shows that the work function of ITO is effectively reduced from 4.7 eV to 4.1 eV due to the PFN dipole layer. Combined with current density-voltage characteristics and the EQE, the results indicate the devices show different working modes: a photodiode or photoconductor type OPD5. For the Ag or Au electrode device, the photogenerated charges can rapidly transport to the corresponding electrodes and then to be collected under reverse bias, which meets the photodiode type. However, the Al electrode device with more than 100% EQE presents the photoconductor mode, which is contributed to that the photogenerated charges accumulate around the interface between the PFN layer and the active layer, and then create a tunneling charge injection under reverse bias. Although both the proposed photodiode and photoconductor devices exhibit large signal-to-noise ratio (10(4)similar to 10(5)), fast response ( similar to mu s), and low working voltage ( - 0.5 V), these two type devices show their unique strengths due to the different working modes. The photodiode devices have higher detectivity (more than 10(13) Jones) and broader linear dynamic range (over 120 dB), while the photoconductor ones possess more than 100% EQE and the better responsivity (0.56 A/W). This work may pave a way to obtain the desirable working mode of the photodetectors by simply tuning the electrode work function.
机译:有机光电探测器(OPD)可以通过两种不同的方式提出:光电二极管系统或光电导体类型,其中前者的外部量子效率(EQE)不能超过100%,而后者则可以超过100%。电极活性层触点是否可以注入至少一种载流子是确定特定光电探测器类型的关键因素。因此,需要充分了解电极/半导体触点在OPD中的作用。在这项工作中,我们通过结合PFN改性的ITO电极,展示了基于PTB7:PC71 BM本体异质结且具有不同的顶部金属电极(Ag,Au,Al)的高性能OPD。紫外光电子能谱显示,由于PFN偶极子层,ITO的功函有效地从4.7 eV降低到4.1 eV。结合电流密度-电压特性和EQE,结果表明这些器件显示出不同的工作模式:光电二极管或光电导体类型为OPD5。对于Ag或Au电极设备,光生电荷可以快速传输到相应的电极,然后在反向偏压下收集,这符合光电二极管类型。然而,EQE大于100%的Al电极器件呈现光电导体模式,这是由于光生电荷在PFN层和有源层之间的界面周围积累,然后在反向偏压下产生隧道电荷注入。尽管建议的光电二极管和光电导体设备都显示出大的信噪比(10(4)类似于10(5)),快速响应(类似于μs)和低工作电压(-0.5 V),但这两个由于不同的工作模式,这种类型的设备显示出其独特的优势。光电二极管器件具有更高的检测率(超过10(13)Jones)和更宽的线性动态范围(超过120 dB),而光电导体则具有超过100%的EQE和更好的响应度(0.56 A / W)。这项工作可以为通过简单地调节电极功函数而获得光电探测器的理想工作模式铺平道路。

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