A study of high-purified specialty gases and high-performance gas delivery system for advanced silicon semiconductor device

摘要

High purified SiH_4 gas is required for manufacturing silicon semiconductor devices (e.g. the formation of Si-single crystal, poly-Si, Si_3N_4 and silisides thin film. However, since it was impossible to develop a technology for analyzing impurities in SiH_4 gas at sub-ppb level, no advances have been made in purification technology of SiH_4 gas. Therefore, we could not get high purified SiH_4 gas. We have newly established a technology for delicately measuring impurities in SiH_4 gas by using a modified Atmospheric Pressure Ionization Mass Spectrometer (APIMS) equipped with a two-compartment ion source.