MOVPE growth and characterisation of silicon /spl delta/-doped GaAs, AlAs and Al/sub x/Ga/sub 1-x/As for advanced semiconductor devices

摘要

The results of metal organic vapour phase epitaxy (MOVPE) growth and characterisation of silicon /spl delta/-doped GaAs, AlAs and Al/sub 0.35/Ga/sub 0.65/As are presented. All epitaxial structures were grown in an atmospheric pressure horizontal AIX 200 Aixtron reactor. Delta doping was formed by SiH/sub 4/ introduction during the growth interruption. The growth temperature was 670/spl deg/C (for GaAs) and 760/spl deg/C (for AlAs and Al/sub 0.35/Ga/sub 0.65/As). Delta-doping characteristic were investigated using capacitance-voltage (C-V) measurements. The narrowest C-V profile (FWHM/sub C-V/=5.3 nm) was obtained for GaAs grown at 670/spl deg/C. The quality of Si delta-doped structures was also examined using photoreflectance (PR) spectroscopy and X-ray measurements.