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首页> 外文期刊>東北大学電通谈话会記録 >スパッタ法による高磁気異方性copt規則化合金膜の作製と構造および磁気特性
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スパッタ法による高磁気異方性copt規則化合金膜の作製と構造および磁気特性

机译:溅射法制备高磁各向异性丘比特有序合金膜的结构,结构和磁性

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摘要

近年,垂直磁気記録媒体の更なる高密度化に対rnする要求は益々,高まっている.高密度化を実現するrnためには,メディアノイズの低減,高い熱安定性,飽rn和記録の間に存在するトリレンマを克服することが不rn可欠である.%L1_1 type Co-Pt ordered alloy films with a large uniaxial magnetic anisotropy, K_u, of the order of 10~7 erg/cm~3 were successfully fabricated at relatively low substrate temperatures of 270-390℃ using ultra-high vacuum sputter film deposition. L1_1 type ordered Co-Pt films, with the <111> direction (easy axis of magnetization) perpendicular to the film plane, were fabricated on MgO(111) single crystal substrates and glass disks. The ordered structure was formed in a wide Pt content region of 40-75 at%, and Kx showed a maximum at around 50% Pt content. The values of the order parameter, S, and K_u for L1_1 type Co5o Pt 5o films increased as the substrate temperature, Ts, increased. Kx reached about 3.7×10~7 erg/cm~3 (S=0.54) at Ts=360℃ for the single crystal films deposited on MgO(111) substrates, indicating a potential increase in Ka by enhancing the ordering. The values of Ku for polycrystalline films deposited on glass disks were smaller than those for the single crystal films on MgO(111) substrates, however, K_u reached 1.9×10~7 erg/cm~3 at Ts=360℃. The experimental demonstrate the potential of L1_1 type Co_(50)Pt_(50) films for use in data storage applications, because of their very high K_u, comparable to L1_0-type Fe_(50)Pt_(50) films, the relatively low fabrication temperature, and good controllability of the grain orientation.
机译:近年来,对垂直磁记录介质的更高密度的需求已经增长。为了实现高密度,必须减少介质噪声,提高热稳定性并克服记录过程中存在的三难困境。使用超高真空溅射膜成功地在270-390℃的较低基底温度下成功制备了%L1_1型Co-Pt有序合金膜,其单轴磁各向异性K_u大,约为10〜7 erg / cm〜3在MgO(111)单晶衬底和玻璃盘上制作垂直于膜平面的<111>方向(易磁化轴)的L1_1型有序Co-Pt膜。 Pt含量在40-75 at%的范围内,而Kx在Pt含量约为50%时达到最大值.L1_1型Co5o Pt 5o薄膜的阶跃参数S和K_u的值随着基板温度Ts的增加而增加。对于沉积在MgO(111)衬底上的单晶膜,在Ts = 360℃时,Kx达到约3.7×10〜7 erg / cm〜3(S = 0.54),表明通过增强有序性,Ka可能增加。沉积在玻璃盘上的沉积膜的Ku小于M上的单晶膜的Ku gO(111)衬底,然而,在Ts = 360°C时K_u达到1.9×10〜7 erg / cm〜3。实验证明了L1_1型Co_(50)Pt_(50)膜在数据存储应用中的潜力,由于其非常高的K_u,可与L1_0型Fe_(50)Pt_(50)膜相比,较低的制造温度,以及良好的晶粒取向可控性。

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