Self-Assembled Patterning of Ultrathin Silicides By Local Oxidation

摘要

The self-assembled patterning method based on local oxidation is fast, indepen- dent of wafer size, and suitable for high throughput. We have achieved pattern- ing by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single-crystalline sili- cide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.