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Theoretical study of extended interaction frequency-locking oscillator based on carbon nanotube cold cathodes

机译:碳纳米管冷阴极扩展相互作用锁频振荡器的理论研究

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摘要

An extended interaction frequency-locking oscillator based on carbon nanotube (CNT) cold cathode is proposed to overcome locked-frequency limits of the conventional oscillator. Compared with the conventional oscillators, the oscillation frequency is locked by a modulation electron beam, which can be obtained in a field emission CNT cold cathode electron gun. The frequency-locking signal does not enter the high-frequency (HF) system but imposes an additional HF electric field on the cathode surface by a microstrip structure, which consumes considerably less power to lock the oscillation frequency. A ladder structure extended interaction oscillator operating in 2π mode is numerically investigated by three-dimensional Particle-In-Cell simulation code. By analysing the impacts of different frequency-locking power on the locked ranges, the results show that the average output power of 30.6 W is achieved at 35.11 GHz when the frequency-locking power consumption is 460 mW. The 3-dB bandwidth of a frequency-locking region reaches 100 MHz.
机译:提出了一种基于碳纳米管(CNT)冷阴极的扩展相互作用锁频振荡器,以克服常规振荡器的锁频限制。与常规振荡器相比,振荡频率由调制电子束锁定,而调制电子束可以在场发射CNT冷阴极电子枪中获得。锁频信号不会进入高频(HF)系统,而是通过微带结构在阴极表面施加一个额外的HF电场,该微带结构会消耗相当少的功率来锁定振荡频率。通过三维粒子模拟代码对以2π模式工作的梯形结构扩展相互作用振荡器进行了数值研究。通过分析不同锁频功率对锁定范围的影响,结果表明,当锁频功耗为460 mW时,在35.11 GHz时,平均输出功率达到30.6W。锁频区域的3 dB带宽达到100 MHz。

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  • 来源
    《Microwaves, Antennas & Propagation, IET》 |2018年第11期|1771-1774|共4页
  • 作者单位

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    State Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

    School of Electronic Science and Engineering, University of Electronic Science and Technology of China, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    carbon nanotubes; electron field emission; millimetre wave oscillators; cathodes;

    机译:碳纳米管;电场发射;毫米波振荡器;阴极;

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