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首页> 外文期刊>Journal of Microelectromechanical Systems >Fabrication of a Curved Row–Column Addressed Capacitive Micromachined Ultrasonic Transducer Array
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Fabrication of a Curved Row–Column Addressed Capacitive Micromachined Ultrasonic Transducer Array

机译:弧形行列寻址电容式微加工超声换能器阵列的制作

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摘要

Capacitive micromachined ultrasonic transducers (CMUTs) exhibit wide-bandwidth and can be made into tiny 2-D arrays that are integrable with electronics. A simple implementation of such 2-D array is the row–column addressed CMUT array. However, one critical limitation of a row–column array is its narrow field of view, which can be improved by curving the array. This paper reports a novel fabrication method that realizes a flexible 32 + 32 elements row–column addressed CMUT array using a two stage fabrication process. First, a functional row–column CMUT array is fabricated with a double silicon-on-insulator wafer bonding process. The second stage involves encapsulating the device with a polymer coating, yet leaving the bottom silicon substrate exposed for wet etching. The bottom buried oxide layer will also act as an etch stop layer. Pitch-catch experiments are presented to verify the functionality. Our final device, excluding the encapsulation layer, is less than thick with a 12.8-mm -mm aperture. The final flexible device exhibits a 4.5-MHz center frequency with a −3-dB fractional bandwidth of 82%. [2015-0317]
机译:电容式微加工超声换能器(CMUT)具有宽带宽,可以制成可与电子设备集成的微小二维阵列。这种二维数组的一个简单实现是行列寻址的CMUT数组。但是,行-列数组的一个关键限制是其狭窄的视野,可以通过弯曲数组来改善视野。本文报告了一种新颖的制造方法,该方法使用两步制造工艺来实现灵活的32 + 32元素行-列寻址CMUT阵列。首先,采用绝缘体上硅双晶片键合工艺制造功能行列CMUT阵列。第二阶段涉及用聚合物涂层封装器件,而使底部硅衬底暴露以进行湿法蚀刻。底部掩埋氧化物层也将充当蚀刻停止层。提出了音高捕捉实验以验证功能。除封装层外,我们最终的器件厚度小于12.8 mm -mm的厚度。最终的柔性器件具有4.5MHz的中心频率,−3dB的分数带宽为82%。 [2015-0317]

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